Kholodnov Viacheslav Aleksandrovich. E-mail: [email protected]
List of some publications
1. Kholodnov V. A. Contribution to Hall-Schockley-Read theory of recombination //
Semiconductors, vol. 30, issue 6, pp. 538-544, 1996.
2. Kholodnov V. A. Avalanche multiplication coefficients of carriers in p-n structures //
Semiconductors, vol. 30, issue 6, pp.558-563, June 1996.
3. Kholodnov V. A. Giant burst of photoconductivity in semiconductors upon an in-crease
in the concentration of recombination centers // Letters to Journal of Experimental and
Theoretical Physics, vol. 67, issue 9, pp. 685-691, 1998.
4. Kurochkin N.E., Kholodnov V. A. Phenomenological model of the anomalous
behavior of the avalanche noise factor in metal-insulator-semiconductor structures // Technical
Physics Letters, vol. 25 , issue 5, pp. 369-371, 1999.
5. Kholodnov V. A., Drugova A.A. On the possibility of suppressing the saturation of
photoelectric amplification of weak optical emission in semiconductors by forming near-contact
variband layers // Technical Physics Letters, vol. 27 , issue 6, pp. 504-507, 2001.
6. Kholodnov V. A., Description of the geiger mode in avalanche p-i-n photodiodes by
elementary functions // Technical Physics Letters , vol. 35, issue 8, pp. 744-748, 2009.
7. Kholodnov V. A., On the degree of blocking of the surface recombination of
photogenerated carriers in semiconductors by the subsurface variband layer // Technical
Physics Letters , vol. 36, issue 10, pp. 929-932, 2010.
8. Nikitin M., Drugova A., Kholodnov V., Chekanova G. Simulation of Small-pitch
High-density Photovoltaic Infrared Focal Plane Arrays. In book ″Advances in Photodiodes″,
edited by Gian-Franco Dalla Betta, part 1, chapter 5, p. 95-120, Austria-Croatia-India-USA,
InTech, March, 2011, (www.intechopen.com).
9. Kholodnov V.A., Nikitin M.S. Physical design fundamentals of high performance
ava-lanche heterophotodiodes with separate absorption and multiplication regions// in book
″Photodiodes - From Fundamentals to Applications″, edited by Ilgu Yun, section 1
″Funda-mental Physics and Physical Design″, chapter 2, p. 27 - 101, InTech, Rijeka-
Shanghai-New York, December 2012, (www.intechopen.com).
10. Kholodnov V.A. On the theory of the photoelectric effect in surface-graded-gap
semi-conductors , Semiconductors, vol. 41, issue 1, pp. 929-932, 2013.
11. Kholodnov V.A. About particular effect of indirect-gap degree in semiconductor on
threshold energy of band-to-band impact generation of electron-hole pairs at two-particle
collisions// International conference Sensor engineering and electronic instrument advances,
21-22 November 2015, Dubai, UAE, Extended abstracts.
12 Kholodnov V.A., Nikitin M.S., Burlakov I. D. Analytical Principles of Physical Design
of Avalanche Heterophotodiodes Based on Direct-Band Semiconductors// International
conference Sensor engineering and electronic instrument advances, 21-22 November 2015,
Dubai, UAE, Extended abstracts.
13. Kholodnov V.A. and Nikitin M. S. The theory of giant splash of photoresponse in
semiconductors at low-level illumination with increasing concentration of deep recombination
impurity // in Optoelectronics - Materials and Deveces, Edited by S. L. Pyshkin and
J. Ballato, Rijeka: InTech, pp. 301-348, 2015, (www.intechopen.com).
14. Kholodnov V. A., Nikitin M. S., Burlakov I. D. Analytical method for calculating
performance of avalanche heterophotodiode with separate absorption and multiplication regions
based on “low-high-low” type heterostructure. The First International Conference on Advances
in Sensors, Actuators, Metering and Sensing ALLSENSORS 2016, April 24 - 28, 2016 - Venice,
Italy, Proceedings of the conference.
15. Kholodnov V. A., Burlakov I. D. and Drugova A.Analytical approuch to selection of
the optimum structure of avalanche heterophotodiodes based on direct gap semiconductors //
Journal of Communication Technology and Electronics, vol. 61, issue 3, pp. 338-343, 2016.
16. Kholodnov V. A. About giant splash of photoelectric response in semiconductors with
increasing concentration of recombination centers. Case of non-uniform illumination along
directon of electric field . The First International Conference on Advances in Sensors, Actuators,
Metering and Sensing ALLSENSORS 2016, April 24 - 28, 2016 - Venice, Italy, Proceedings of
the conference.